| dc.description.abstract | Copper indium ditelluride (CuInTe2) has been electrochemically deposited from
aqueous solution. Cyclic voltammetry analyses were used to determine suitable deposition
parameters. pH-potential diagram was drawn to provide information on the chemical
reactions taking place at different deposition potentials and pH. As measured by Talysurf
and gravimetric techniques, the thickness of deposited films was found to be ~2.0 μm,
when deposited over a period of 3 hrs. X-ray diffraction, and optical absorption have been
used to investigate the bulk structure, energy band gap of the material layers respectively. It
was found that it has polycrystalline chalcopyrite structure with band gap varied between
1.10 and 1.30 eV. | en_US |
