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Influence of annealing and Hydrogen content on structural and optoelectronic properties of Nano-multilayers of a-Si:H/a-Ge: H used in Solar Cells
(ELMERGIB UNIVERSITY, 2021-07)
Nano-multilayers (NMLs) of a-Si:H/a-Ge: H were prepared at 200◦C by alternating deposition from SiH4 and GeH4 plasmas in a computer-controlled four chamber glow-discharge deposition system with capacitive coupled diode ...