عرض سجل المادة البسيط

dc.contributor.authorM. Alshuaiba, M. Alshuaiba, G. E. G. E.
dc.contributor.authorA. Muftaha and E. M. Ashmila b, A. Muftaha and E. M. Ashmila b
dc.date.accessioned2021-07-07T09:03:18Z
dc.date.available2021-07-07T09:03:18Z
dc.date.issued2016-06
dc.identifier.urihttp://dspace.elmergib.edu.ly/xmlui/handle/123456789/540
dc.description.abstractThe aim of this study is to investigate the morphology and composition of the CuInSe2 thin film deposited by Stacked Elemental Layer technique SEL. The films were annealed in different ways to increase the chalcopyrite phase which may improve its’ electrical and optical properties. The chalcopyrite phase dominates when samples heated or step heated at 400⁰ C for 40 – 50 minutes in argon, and for 15 minutes in vacuum. Deposited films were characterized using Atomic percentage composition and x-ray diffraction techniques. This paper describes the production of well-formed polycrystalline CuInSe2 and well defined XRD peaks. Atomic percentage composition has been studied in order to investigate the composition of the films. The thickness of layers were monitored by a quartz crystal monitor. Keywords: CuInSe2 thin film, Photovoltaic (PV) energy, the chalcopyrite CuInSe2en_US
dc.language.isoenen_US
dc.publisherElmergib Uinversityen_US
dc.titleMorphology and composition of CulnSe2 that film deposited by Stacked Elemental Layers for solar cells applicationen_US
dc.typeOtheren_US


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عرض سجل المادة البسيط